Chips with a record capacity of 1 GB are not afraid of radiation, cold and store data for 10 years

Micross, a company engaged in the development of electronics, announced the release of a 1-gigabyte component

Magnetoresistive RAM (MRAM). This is many times denser magnetoresistive memory than previously proposed. The density of STT-MRAM memory cells has been increased by 64 times.

According to The Register, the basisSTT-MRAM Micross chips are based on the technology of the American company Avalanche Technology. Despite the fact that Samsung introduced a 1 GB STT-MRAM unit almost three years ago, Micross can be credited with the release of a discrete 1 GB STT-MRAM, which can be easily used in electronics instead of NAND flash memory.

STT-MRAM memory operates in a higher temperaturerange (-40 ° C to 125 ° C). It can be rewritten almost indefinitely. Also, she is not afraid of radiation and temperature changes. This is especially useful in the aerospace industry and its harsh environment. Cell data is stored for up to 10 years.

The Register asked Micross to provideinformation about prices for new parts, but the company did not respond at the time of publication of the article. Interested parties can contact the company through the company's website.

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