Created antiferromagnet for data storage, operating at room temperature

An international team of scientists has developed a hybrid device consisting of a ferromagnet and

an antiferromagnet in which spin current transfer is ensured. The development will help in the creation of spintronics devices - advanced electronics that use quantum effects.

Spintronics is working on creating deviceswhich use electron spin as an additional way to store information. The spin change occurs in a few picoseconds and requires almost no energy. In addition, when the direction of the spin changes, the kinetic energy of the electron does not change, and this practically does not lead to the release of heat. 

Antiferromagnets have a zero resultantmagnetization, and they are insensitive to perturbations of an external magnetic field. Combining the spin current and the properties of such materials opens up great prospects for creating ultra-fast and energy-efficient platforms for storing, processing and transmitting information, the authors of the study explain.

Previously, scientists have shown that in two-layermaterials from an antiferromagnet and a non-magnetic metal, spin injection (movement of a spin current) can be provided. But this required very low temperatures. In a new work, the authors demonstrated the creation of a spin current in a material made of chromium oxide (Cr2O3, antiferromagnet) and permalloy (ferromagnet) at room temperature.

During the experiments, scientists recordedinteraction of magnons (quasiparticles that provide interaction between spins) in two substances. In addition, they proved the importance of these particles for creating spin current. Researchers believe that controlling spin currents in such systems will help create devices for ultra-fast processing and secure storage of information.

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