Engineers from the University of Tokyo have produced vertically shaped three-dimensional field-effect transistors for
Experimental 3D multilayer cellmemory is based on vertical field-effect transistors with an oxide-semiconductor channel. Inside the channel, the researchers deposited layers of hafnium oxide (ferroelectric) and indium oxide (antiferroelectric).
The created device usesferroelectricity (spontaneous polarization in crystals) for data storage. Information is stored by the degree of polarization in the ferroelectric layer, which can be read by the system due to changes in electrical resistance. The developers explain that ferroelectrics have electric dipoles that are most stable when aligned in the same direction. Hafnium oxide provides spontaneous alignment of dipoles.
The researchers say that by using an antiferroelectric instead of a ferroelectric, they found that only a tiny net charge is needed to erase, improving the efficiency of data writing.
Authors of the work presented at the conferenceThe Institute of Electrical and Electronics Engineers report that the created experimental device works stably for at least 1000 write cycles.
The scientists believe that the combination of such experimental modules will help create low-power storage systems for IoT consumer electronics.
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