Head of the laboratory of the Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences,
It is planned to grow the material on the ISS using the methodmolecular beam epitaxy, which requires such vacuum characteristics as in space. At the end of 2022 or at the beginning of 2023, complex tests will be carried out, in which the prototype will dock with the ISS mock-up and its performance will be checked in the standard ISS system.
The installation will be ready for production of the flight prototypetransmitted after checking the connection to the equipment, when it is clear that all “circuits understand each other.” The production will be carried out by the Rocket and Space Corporation Energia. The installation for growing semiconductors is a joint project of RSC Energia and the Institute of Physics of Physics SB RAS.
The materials that will be grown on the ISS are planned to be used in microelectronics and photonics.
“Together with RKK we made a preliminary design.The spacecraft will fly away from the ISS quite far, carry out technological regimes, and return. Reboot on the ISS - finished products are removed, and the source materials for the next batch are unloaded, ”said Alexander Nikiforov.