Samsung is the first to start production of 3nm chips with FinFET replacement

Samsung is one of the significant players in the semiconductor market and TSMC's main competitor in terms of

Recall that recently the Taiwanese presented their 3nm technology and even talked about a 2nm analogue.Samsung has announced the start of production of its vision of a 3nm architecture with a new Gate-All-Around (GAA) technology to circumvent the limitations of FinFETThis will provide a decent boostperformance (due to an increase in the permissible current) and energy efficiency (due toAccording to Samsung, the first generation of the 3nm architecture will provide23% performance, 45% energy efficiency and 16% space savings compared to 5nm counterpart.The second generation will bring these figures to 30%, 50 and 35%, respectively.

The Koreans also reported the first application of transistor nanosheet technology, which is comingIts advantage is wider channels, which become a prerequisite for increased productivity, energy efficiency and a level of optimization.At first, it was tested on high-performance computing systems with subsequent porting to mobile chipsets.Probably, we will see the first real projects on Samsung's 3nm architecture later this year by Qualcomm and/or Apple.

    © Artur Luchkin.

    According to Samsung